onsemi MUN5213DW1T1G
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 187mW Surface Mount SOT-363
Specifications
MPN: MUN5213DW1T1G
Category: Bipolar Transistor Arrays, Pre-Biased
Imported From: lcsc
Vendor: LCSC Electronics
Source: View original listing
Created: 3/14/2026
Updated: 3/14/2026
External ID: lcsc:C95381
Attributes
type: NPN
Number: 2 NPN (Pre-Biased)
Input Resistor: 47kΩ
Resistor Ratio: 1
DC Current Gain: 80
Operating Temperature: -55℃~+150℃
Output Voltage(VO(on)): 200mV
Pd - Power Dissipation: 187mW
Current - Collector(Ic): 100mA
Vce Saturation(VCE(sat)): 250mV
"Input Voltage (VI(on)@Ic: 1.9V@3mA,0.2V
Current - Collector Cutoff: 100nA
Documents
MUN5213DW1T1G Datasheet
datasheet
Pricing
LCSC Electronics: $0.03