onsemi MUN5330DW1T1G
Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 187mW Surface Mount SOT-363
Specifications
MPN: MUN5330DW1T1G
Category: Bipolar Transistor Arrays, Pre-Biased
Imported From: lcsc
Vendor: LCSC Electronics
Source: View original listing
Created: 3/14/2026
Updated: 3/14/2026
External ID: lcsc:C463100
Attributes
type: NPN+PNP
Number: "1 NPN
Input Resistor: 1kΩ
DC Current Gain: 3
Pd - Power Dissipation: 187mW
Current - Collector(Ic): 100mA
Vce Saturation(VCE(sat)): 250mV
"Input Voltage (VI(on)@Ic: 1.7V
Current - Collector Cutoff: 100nA
Voltage - Input(Max)(VI(off)): 1.2V
Collector - Emitter Voltage VCEO: 50V
Documents
MUN5330DW1T1G Datasheet
datasheet
Pricing
LCSC Electronics: $0.03