onsemi NSVMUN5111DW1T3G
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-363
Specifications
MPN: NSVMUN5111DW1T3G
Category: Bipolar Transistor Arrays, Pre-Biased
Imported From: lcsc
Vendor: LCSC Electronics
Source: View original listing
Created: 3/14/2026
Updated: 3/14/2026
External ID: lcsc:C463398
Attributes
type: PNP
Number: 2 PNP Pre-Biased Transistors
Input Resistor: 10kΩ
Resistor Ratio: 1
DC Current Gain: 35
Operating Temperature: -55℃~+150℃
Pd - Power Dissipation: 250mW
Current - Collector(Ic): 100mA
Vce Saturation(VCE(sat)): 250mV
"Input Voltage (VI(on)@Ic: 2.2V@10mA,200mV
Current - Collector Cutoff: 100nA
Collector - Emitter Voltage VCEO: 50V
Documents
NSVMUN5111DW1T3G Datasheet
datasheet
Pricing
LCSC Electronics: $0.05