TOSHIBA RN1703JE(TE85L,F)
Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased (Emitter-Coupled) 50V 100mA 100mW Surface Mount SOT-553
Specifications
MPN: RN1703JE(TE85L,F)
Category: Bipolar Transistor Arrays, Pre-Biased
Imported From: lcsc
Vendor: LCSC Electronics
Source: View original listing
Created: 3/14/2026
Updated: 3/14/2026
External ID: lcsc:C17268089
Attributes
type: NPN
Number: 2 NPN Pre-Biased (Emitter-Coupled)
Input Resistor: 22kΩ
Resistor Ratio: 1
DC Current Gain: 70
Pd - Power Dissipation: 100mW
Current - Collector(Ic): 100mA
Transition frequency(fT): 250MHz
Vce Saturation(VCE(sat)): 300mV
"Input Voltage (VI(on)@Ic: 3V@5mA,200mV
Emitter-Base Voltage VEBO: 10V
Current - Collector Cutoff: 100nA
Documents
RN1703JE(TE85L,F) Datasheet
datasheet
Pricing
LCSC Electronics: $0.15