HXY MOSFET HC1M30065D
N-Channel 650V 90A 428W Through Hole TO-247
Specifications
MPN: HC1M30065D
Category: Single FETs, MOSFETs
Imported From: lcsc
Vendor: LCSC Electronics
Source: View original listing
Created: 3/14/2026
Updated: 3/14/2026
External ID: lcsc:C41428805
Attributes
Type: N-Channel
RDS(on): 40mΩ@18V
Configuration: -
Gate Charge(Qg): 98nC
Ciss-Input Capacitance: 2.079nF
Pd - Power Dissipation: 428W
Drain to Source Voltage: 650V
Operating Temperature\t-: -55℃~+175℃
Output Capacitance(Coss): 180pF
Current - Continuous Drain(Id): 90A
Gate Threshold Voltage (Vgs(th)): 4V
Reverse Transfer Capacitance (Crss@Vds): 22pF
Documents
HC1M30065D Datasheet
datasheet
Pricing
LCSC Electronics: $8.59
LCSC Electronics: $12.25