HXY MOSFET NVH4L040N65S3F-HXY
650V 49A 241W Through Hole TO-247-4L
Specifications
MPN: NVH4L040N65S3F-HXY
Category: Single FETs, MOSFETs
Imported From: lcsc
Vendor: LCSC Electronics
Source: View original listing
Created: 3/14/2026
Updated: 3/14/2026
External ID: lcsc:C48972061
Attributes
Package: 650V
RDS(on): 59mΩ
Gate Charge(Qg): 69.9nC
Ciss-Input Capacitance: 1.509nF
Pd - Power Dissipation: 241W
Drain to Source Voltage: 650V
Operating Temperature\t-: -40℃~+175℃
Output Capacitance(Coss): 130pF
Current - Continuous Drain(Id): 49A
Gate Threshold Voltage (Vgs(th)): 4V
Reverse Transfer Capacitance (Crss@Vds): 16pF
Documents
NVH4L040N65S3F-HXY Datasheet
datasheet
Pricing
LCSC Electronics: $5.66
LCSC Electronics: $6.23
LCSC Electronics: $7.99