HXY MOSFET NVH040N65S3F-HXY
650V 49A 242W Through Hole TO-247
Specifications
MPN: NVH040N65S3F-HXY
Category: Single FETs, MOSFETs
Imported From: lcsc
Vendor: LCSC Electronics
Source: View original listing
Created: 3/14/2026
Updated: 3/14/2026
External ID: lcsc:C48972068
Attributes
Package: 650V
RDS(on): 49mΩ
Gate Charge(Qg): 96nC
Ciss-Input Capacitance: 1.823nF
Pd - Power Dissipation: 242W
Drain to Source Voltage: 650V
Operating Temperature\t-: -55℃~+175℃
Output Capacitance(Coss): 190pF
Current - Continuous Drain(Id): 49A
Gate Threshold Voltage (Vgs(th)): 4V
Reverse Transfer Capacitance (Crss@Vds): 19pF
Documents
NVH040N65S3F-HXY Datasheet
datasheet
Pricing
LCSC Electronics: $6.39
LCSC Electronics: $7.03
LCSC Electronics: $9.02