HXY MOSFET NTH4L027N65S3F-HXY
650V 97A 429W Through Hole TO-247-4L
Specifications
MPN: NTH4L027N65S3F-HXY
Category: Single FETs, MOSFETs
Imported From: lcsc
Vendor: LCSC Electronics
Source: View original listing
Created: 3/14/2026
Updated: 3/14/2026
External ID: lcsc:C48972072
Attributes
Package: 650V
RDS(on): 25mΩ
Gate Charge(Qg): 172nC
Ciss-Input Capacitance: 3.28nF
Pd - Power Dissipation: 429W
Drain to Source Voltage: 650V
Operating Temperature\t-: -55℃~+175℃
Output Capacitance(Coss): 359pF
Current - Continuous Drain(Id): 97A
Gate Threshold Voltage (Vgs(th)): 4V
Reverse Transfer Capacitance (Crss@Vds): 33pF
Documents
NTH4L027N65S3F-HXY Datasheet
datasheet
Pricing
LCSC Electronics: $8.13
LCSC Electronics: $8.93
LCSC Electronics: $11.47