HXY MOSFET SIHG44N65EF-GE3-HXY
650V 29A 150W Through Hole TO-247
Specifications
MPN: SIHG44N65EF-GE3-HXY
Category: Single FETs, MOSFETs
Imported From: lcsc
Vendor: LCSC Electronics
Source: View original listing
Created: 3/14/2026
Updated: 3/14/2026
External ID: lcsc:C48972085
Attributes
Package: 650V
RDS(on): 79mΩ
Gate Charge(Qg): 46nC
Ciss-Input Capacitance: 1.02nF
Pd - Power Dissipation: 150W
Drain to Source Voltage: 650V
Operating Temperature\t-: -40℃~+175℃
Output Capacitance(Coss): 80pF
Current - Continuous Drain(Id): 29A
Gate Threshold Voltage (Vgs(th)): 3.6V
Reverse Transfer Capacitance (Crss@Vds): 9pF
Documents
SIHG44N65EF-GE3-HXY Datasheet
datasheet
Pricing
LCSC Electronics: $2.95
LCSC Electronics: $3.04
LCSC Electronics: $3.22
LCSC Electronics: $3.62